| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,345 pcs
|
21345 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,914 pcs
|
1914 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TK13A65D is a Silicon N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 650V and can handle a continuous drain current of up to 13A at a VGS of 10V. The typical on-resistance (RDS(on)) for this device is 0.47 ohms under the same test conditions.
This MOSFET is manufactured by Toshiba and is part of their power semiconductor offerings. Its construction is based on Metal-oxide Semiconductor Field-Effect Transistor technology. The component is suitable for various power switching and amplification circuits where high voltage and moderate current handling are required.
Further details regarding specific operating conditions, thermal characteristics, and package information would typically be found in the manufacturer's datasheet. This component is classified under Transistors - JFETs in the Discrete Semiconductor Products category.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.89 | $1.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The typical drain current is 13A.
The typical drain-source on-resistance is 0.47 ohms.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.