| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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434 pcs
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434 pcs | On Request | 1 | On Request | On Request | 1212+ | On Request | On Request |
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The Toshiba TK13A45D is a silicon N-channel MOSFET of the π-MOSⅦ type, suitable for switching regulator applications. It features a high drain-source breakdown voltage of 450V and a continuous drain current capability of 13A.
Key electrical characteristics include a low drain-source on-resistance of 0.38 Ohms (typical) and a high forward transfer admittance of 6.0 S (typical). The gate-source threshold voltage ranges from 2.0 to 4.0V. Leakage current is minimized at 10 μA maximum when the drain-source voltage is 450V.
This MOSFET is housed in a TO-220SIS package, designed for through-hole mounting. Its robust specifications make it a reliable component for power management circuits.
The minimum drain-source breakdown voltage is 450V.
The maximum continuous drain current is 13A.
The typical on-resistance is 0.38 Ohms at Vgs=10V and Id=6.5A.
It is available in a TO-220SIS through-hole package.
The gate threshold voltage is 2.0V to 4.0V at Vds=10V and Id=1mA.
The maximum zero gate voltage drain current is 10µA at Vds=450V.
The mounting type is through hole.