Mfr Part #:

TK12J60W

Mfr Name: Toshiba

The Toshiba TK12J60W is an N-Channel Power MOSFET designed for switching voltage regulators. It offers a 600V breakdown voltage and low on-resistance.

✓ Total Stock: 44 pcs

TK12J60W Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	44 pcs On Request	44 pcs	On Request	1	On Request	On Request	12+	On Request	On Request

TK12J60W Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	Through Hole
Power Dissipation	110 W
Storage Temperature	-55 to 150 °C

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TK12J60W Description

Short technical summary and product information.

The Toshiba TK12J60W is a silicon N-Channel Power MOSFET utilizing DTMOS technology. It is designed for applications such as switching voltage regulators.

Key electrical characteristics include a drain-source breakdown voltage of 600V and a continuous drain current of 11.5A at 25°C. The device features a low typical drain-source on-resistance (RDS(ON)) of 0.265 Ohms, making it efficient for power switching applications. The gate threshold voltage (Vth) ranges from 2.7V to 3.7V.

This MOSFET operates within a channel temperature range of -55°C to 150°C and has a storage temperature range of -55°C to 150°C. The packaging is a TO-3P(N) type, suitable for through-hole mounting.

Absolute maximum ratings include a gate-source voltage of ±30V and a power dissipation of 110W at 25°C case temperature. The device also has an avalanche current rating of 3.0A and a single pulse avalanche energy of 140 mJ.

TK12J60W Quick Information

Product Type: N-Channel MOSFET

Series: TK

Canonical Name: Toshiba TK12J60W N-Channel Power MOSFET

Subcategory: N-Channel

TK12J60W Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK12J60W Features

600V Drain-Source Breakdown Voltage
Low 0.265 Ohm Typical On-Resistance
11.5A Continuous Drain Current
TO-3P(N) Package for Through Hole
DTMOS Technology for Efficiency

TK12J60W Applications

Used in high-voltage power supply circuits.
Suitable for motor control applications.
Ideal for inductive load switching.
Applicable in DC-DC converters.

TK12J60W FAQs

5 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the TK12J60W MOSFET?

The drain-source breakdown voltage is 600V.

What is the typical on-resistance of the TK12J60W?

The typical drain-source on-resistance is 0.265 Ohms.

What is the continuous drain current for the TK12J60W?

The continuous drain current is 11.5A at 25°C.

What type of package does the TK12J60W come in?

The TK12J60W comes in a TO-3P(N) package.

What is the maximum channel temperature for the TK12J60W?

The maximum channel temperature is 150°C.