| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK12J60U(F) is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-source breakdown voltage of 600V and can handle a continuous drain current of up to 12A. The MOSFET exhibits a low on-state resistance of 400mOhm at 6A and 10V gate drive, with a gate charge of 14nC.
This device utilizes MOSFET (Metal Oxide) technology and is configured as a single N-Channel FET. It operates within a temperature range of -55°C to +150°C. The input capacitance is rated at 720pF at 10V.
The TK12J60U(F) is supplied in a Through Hole mounting style, specifically in a TO-3P-3, SC-65-3 package, also referred to as TO-3P(N). The maximum power dissipation is 144W. It also includes typical rise and fall times of 30ns and 8ns, respectively.
This MOSFET is suitable for applications such as power supply circuits in cell phones and notebook PCs, battery protection circuits for lithium-ion secondary batteries, and motor driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 12A.
The Rds On is a maximum of 400mOhm at 6A and 10V.
The operating temperature range is -55°C to +150°C.
The TK12J60U(F) is supplied in a TO-3P-3, SC-65-3 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.