BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | 1303+ | On Request | On Request |
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The Toshiba TK12J55D is an N-Channel Metal-oxide Semiconductor Field-Effect Transistor (MOSFET). It offers a breakdown voltage of 550V and a maximum continuous drain current capability of 12A.
Key electrical specifications include a minimum drain-source resistance of 570mΩ and a maximum power dissipation of 190W. The device can operate at temperatures up to 150°C.
Designed for surface mounting, the TK12J55D is suitable for various power switching applications where high voltage and moderate current handling are required. Its robust construction and specified parameters make it a reliable component for electronic designs.
This MOSFET is part of Toshiba's line of power semiconductor devices, providing efficient power control solutions.
The TK12J55D MOSFET has a minimum breakdown voltage of 550V.
The maximum power dissipation for the TK12J55D is 190W.
The TK12J55D can operate at a maximum temperature of 150°C.
The minimum drain-source resistance for the TK12J55D is 570mΩ.
The TK12J55D is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TK12J55D is 1 Unlimited.