Mfr Part #:

TK12A65D

Mfr Name: Toshiba

The Toshiba TK12A65D is an N-Channel MOSFET designed for switching voltage regulators. It features a low drain-source on-resistance and high forward transfer admittance.

✓ Total Stock: 26,221 pcs

$ Price Range: $2.54

TK12A65D Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	18,656 pcs On Request	18656 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,565 pcs On Request	7565 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

TK12A65D Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Power Dissipation	50 W
Storage Temperature	-55 to 150 C

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TK12A65D Description

Short technical summary and product information.

The Toshiba TK12A65D is a Silicon N-Channel Power MOSFET designed for applications such as switching voltage regulators. It offers a low drain-source on-resistance of 0.46 Ohms (typical) and a high forward transfer admittance of 6.0 S (typical).

Key electrical characteristics include a maximum drain-source voltage of 650V and a continuous drain current of 12A at 25C case temperature. The device also has a low leakage current of 10 µA (max) at 650V.

Packaged in a TO-220SIS, this MOSFET is suitable for various power switching applications where efficiency and reliability are critical. Its thermal characteristics include a channel-to-case thermal resistance of 2.5 C/W.

TK12A65D Quick Information

Product Type: MOSFET

Canonical Name: TK12A65D N-Channel MOSFET

Subcategory: MOSFETs

TK12A65D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK12A65D Estimated Pricing

Qty	Low	High
1+	$2.54	$2.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK12A65D Features

Low drain-source on-resistance: 0.46 Ohm typical.
High forward transfer admittance: 6.0 S typical.
Maximum drain-source voltage: 650 V.
Continuous drain current: 12 A.
TO-220SIS package for power applications.

TK12A65D Applications

Used in high-voltage power switching circuits
Suitable for motor control applications
Ideal for power supply designs
Applicable in high-voltage switching environments

TK12A65D FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the TK12A65D?

The maximum drain-source voltage for the TK12A65D is 650 V.

What is the typical drain-source on-resistance of the TK12A65D?

The typical drain-source on-resistance of the TK12A65D is 0.46 Ohms.

What is the continuous drain current rating for the TK12A65D?

The continuous drain current rating for the TK12A65D is 12 A at 25C case temperature.

What package type is the TK12A65D MOSFET supplied in?

The TK12A65D MOSFET is supplied in a TO-220SIS package.

What is the typical forward transfer admittance of the TK12A65D?

The typical forward transfer admittance of the TK12A65D is 6.0 S.

What is the maximum channel temperature for the TK12A65D?

The maximum channel temperature for the TK12A65D is 150 C.