| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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345 pcs
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345 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TK12A50E is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 520mOhm at 6A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 1.2mA, and the input capacitance (Ciss) is a maximum of 1300pF at 25V.
This MOSFET has a maximum power dissipation of 45W (Tc) and an operating temperature range of up to 150°C (TJ). It is mounted using a through-hole method and comes in a TO-220SIS package, also referred to as TO-220-3 Full Pack.
The TK12A50E is suitable for applications requiring high voltage and current handling capabilities within a standard through-hole package.
The maximum drain-to-source voltage is 500V.
The continuous drain current is 12A at 25°C (Ta).
The maximum on-resistance is 520mOhm at 6A and 10V.
The operating temperature range is up to 150°C (TJ).
The TK12A50E is supplied in a TO-220SIS package, also known as TO-220-3 Full Pack.
The TK12A50E is mounted using the through-hole method.