TK12A50D(STA4,Q,M) The Toshiba TK12A50D(STA4,Q,M) is an N-Channel MOSFET with a 500V drain-source voltage and 12A continuous drain current. It is housed in a TO-220SIS package.
Mfr Part #:

TK12A50D(STA4,Q,M)

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK12A50D(STA4,Q,M) is an N-Channel MOSFET with a 500V drain-source voltage and 12A continuous drain current. It is housed in a TO-220SIS package.
✓ Total Stock: 4,066 pcs
$ Price Range: $2.56

TK12A50D(STA4,Q,M) Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,636 pcs
3636 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
430 pcs
430 pcs On Request 1 On Request On Request 09+NOPB On Request On Request

TK12A50D(STA4,Q,M) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK12A50D(STA4,Q,M) Description

Short technical summary and product information.

This N-Channel MOSFET from Toshiba, model TK12A50D(STA4,Q,M), is designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 500V and can handle a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds On) is specified at a maximum of 520mOhm at 6A and 10V gate drive voltage.

 

The device operates at temperatures up to 150°C (TJ) and has a gate charge (Qg) of 25 nC maximum at 10V. The input capacitance (Ciss) is 1350 pF maximum at 25V, and the gate threshold voltage (Vgs(th)) is 4V maximum at 1mA. The maximum gate-source voltage (Vgs) is ±30V.

 

Packaged in a TO-220-3 Full Pack (TO-220SIS), this MOSFET is designed for through-hole mounting. Its technology is MOSFET (Metal Oxide), and it is rated for a maximum power dissipation of 45W (Tc).

TK12A50D(STA4,Q,M) Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TK12A50D(STA4,Q,M) N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

TK12A50D(STA4,Q,M) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK12A50D(STA4,Q,M) Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK12A50D(STA4,Q,M) Features

  • 500V drain-to-source voltage.
  • 12A continuous drain current.
  • 520mOhm maximum on-resistance.
  • 150°C maximum operating temperature.
  • TO-220SIS through-hole package.

TK12A50D(STA4,Q,M) Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for general switching tasks.
  • Applicable in power management systems.

TK12A50D(STA4,Q,M) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TK12A50D(STA4,Q,M)?

The maximum drain-to-source voltage (Vdss) is 500V.

What is the continuous drain current rating?

The continuous drain current (Id) is 12A at 25°C.

What is the maximum on-resistance?

The maximum on-resistance (Rds On) is 520mOhm at 6A and 10V.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the TK12A50D(STA4,Q,M) in?

The device is in a TO-220-3 Full Pack (TO-220SIS) package.

Is the TK12A50D(STA4,Q,M) RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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