| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The TK12A10K3 from Toshiba is a single N-Channel MOSFET designed for various electronic applications. This component offers a maximum drain-source voltage of 1000V and a continuous drain current of up to 12A, making it suitable for power switching and control circuits.
The MOSFET is housed in a TO-220F package, which is a common through-hole mounting type, facilitating integration into circuit designs. Its robust specifications allow for reliable performance in demanding environments.
This part is manufactured by Toshiba Semiconductor and is part of their range of discrete semiconductor products. It is categorized under Transistors - FETs, MOSFETs - Single, indicating its primary function as a field-effect transistor.
The maximum drain-source voltage for the TK12A10K3 is 1000V.
The continuous drain current rating for the TK12A10K3 is 12A.
The TK12A10K3 is available in a TO-220F package.
The TK12A10K3 is designed for through-hole mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.