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TK11P65W,RQ The Toshiba TK11P65W,RQ is an N-Channel MOSFET designed for 650V operation with a continuous drain current of 11.1A. It features a low Rds On of 440mOhm at 10V gate drive.
Mfr Part #:

TK11P65W,RQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK11P65W,RQ is an N-Channel MOSFET designed for 650V operation with a continuous drain current of 11.1A. It features a low Rds On of 440mOhm at 10V gate drive.
✓ Total Stock: 9,891 pcs
$ Price Range: $2.56

TK11P65W,RQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,891 pcs
On Request
9891 pcs On Request 1 On Request On Request 18+PBF On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK11P65W,RQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK11P65W,RQ Description

Short technical summary and product information.

This Toshiba TK11P65W,RQ is an N-Channel MOSFET with a drain-source voltage rating of 650V and a maximum continuous drain current of 11.1A. It offers a low on-resistance of 440mOhm at 10V gate drive, making it suitable for various power applications.

 

The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. Its operating temperature range is up to 150°C (TJ), and it has a maximum power dissipation of 100W (Tc).

 

Key electrical characteristics include a gate charge of 25nC at 10V and an input capacitance of 890pF at 300V. The gate-source voltage has a maximum rating of ±30V, and the gate threshold voltage is 3.5V at 450µA.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

TK11P65W,RQ Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TK11P65W,RQ N-Channel MOSFET
Subcategory: N-Channel

TK11P65W,RQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK11P65W,RQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK11P65W,RQ Features

  • 650V drain-source voltage rating.
  • 11.1A continuous drain current.
  • 440mOhm maximum on-resistance.
  • Surface mount DPAK package.
  • RoHS3 compliant.

TK11P65W,RQ Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for lighting solutions.
  • Applicable in industrial equipment.

TK11P65W,RQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the TK11P65W,RQ?

The drain-source voltage (Vdss) is 650 V.

What is the maximum continuous drain current for the TK11P65W,RQ?

The maximum continuous drain current (Id) is 11.1A.

What is the maximum on-resistance of the TK11P65W,RQ?

The maximum on-resistance (Rds On) is 440mOhm at 5.5A drain current and 10V gate-source voltage.

What is the package type for the TK11P65W,RQ?

The package is TO-252-3, DPak (2 Leads + Tab), SC-63, designed for surface mounting.

What is the operating temperature range of the TK11P65W,RQ?

The operating temperature is 150°C (TJ).

Is the TK11P65W,RQ RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK11P65W,RQ?

The Moisture Sensitivity Level is 1 Unlimited.

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