| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK11A65W,S5X is an N-Channel MOSFET belonging to the DTMOS family, utilizing a Super Junction Structure for low drain-source on-resistance. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a maximum drain-source voltage of 650V and a continuous drain current of 11.1A at 25°C. The gate threshold voltage (Vgs(th)) is 3.5V (max) at 450µA, and the on-resistance (Rds On) is a maximum of 390mOhm at 5.5A and 10V drive voltage. The gate charge (Qg) is a maximum of 25nC at 10V, and input capacitance (Ciss) is 890pF at 300V.
This MOSFET is housed in a TO-220SIS package, suitable for through-hole mounting. It has a maximum power dissipation of 35W (Tc) and an operating channel temperature of up to 150°C. The device also offers an isolation voltage of 2000V (RMS).
With its robust specifications, the TK11A65W,S5X is well-suited for power supply designs and other switching applications requiring high voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the TK11A65W,S5X is 650V.
The TK11A65W,S5X has a continuous drain current rating of 11.1A at 25°C.
The on-resistance (Rds On) for the TK11A65W,S5X is a maximum of 390mOhm at 5.5A and 10V.
The TK11A65W,S5X MOSFET is supplied in a TO-220SIS package.
The maximum channel temperature for the TK11A65W,S5X is 150°C.