| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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33,775 pcs
|
33775 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | 2026-06-03 08:15:20 | |
|
4,228 pcs
|
4228 pcs | On Request | 1 | On Request | On Request | 1908+ | On Request | On Request |
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The Toshiba TK11A65D is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a high Drain-Source Voltage rating of 650V, making it suitable for power switching applications.
Key electrical characteristics include a typical Drain-Source On Resistance of 700mΩ at 10V, a Continuous Drain Current of 11A, and a typical Gate-Source Threshold Voltage of 4V at 10V. The input capacitance is typically 1.7nF at 25V.
The MOSFET is housed in a TO-220 package, with dimensions of 10mm x 4.5mm x 15mm. This package type is commonly used for power applications due to its thermal performance and ease of mounting.
Environmental compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status. These attributes are based on existing database information and should be verified.
The Drain-Source Voltage is 650V.
The typical Drain-Source On Resistance is 700mΩ at 10V.
The continuous drain current is 11A.
The package type is TO-220.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.