Mfr Part #:

TK10V60W,LVQ

Mfr Name: Toshiba

The Toshiba TK10V60W,LVQ is an N-Channel MOSFET designed for switching voltage regulators. It offers a 600V drain-source voltage and 9.7A DC current capability.

✓ Total Stock: 126,533 pcs

$ Price Range: $2.56

TK10V60W,LVQ Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	120,533 pcs On Request	120533 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	13+	On Request	On Request

TK10V60W,LVQ Description

Short technical summary and product information.

The Toshiba TK10V60W,LVQ is a silicon N-Channel MOSFET utilizing DTMOS technology. It is designed for applications such as switching voltage regulators.

Key electrical characteristics include a maximum drain-source voltage of 600V and a continuous DC drain current of 9.7A. The on-resistance (Rds(on)) is a maximum of 380mOhm at 4.9A and 10V gate-source voltage. It features a gate threshold voltage (Vgs(th)) between 2.7V and 3.7V at 0.5mA.

This MOSFET is available in a 4-DFN-EP (8x8) package, suitable for surface mounting. The operating channel temperature is rated up to 150°C, with a storage temperature range of -55°C to 150°C. Thermal resistance from channel to case is a maximum of 1.5°C/W.

TK10V60W,LVQ Quick Information

Product Type: MOSFET

Canonical Name: Toshiba TK10V60W,LVQ N-Channel MOSFET

Subcategory: N-Channel

TK10V60W,LVQ Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK10V60W,LVQ Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK10V60W,LVQ Features

600V drain-source voltage rating.
9.7A continuous DC drain current.
Low Rds(on) of 380mOhm maximum.
Surface mount 4-DFN-EP (8x8) package.
Designed for switching voltage regulators.

TK10V60W,LVQ Applications

Used in switching voltage regulators.
Suitable for power supply circuits.
Ideal for high-voltage applications.

TK10V60W,LVQ FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the TK10V60W,LVQ?

The maximum drain-source voltage (Vds) is 600V.

What is the continuous DC drain current of the TK10V60W,LVQ?

The continuous DC drain current is 9.7A.

What is the maximum on-resistance (Rds(on)) for this MOSFET?

The maximum Rds(on) is 380mOhm at 4.9A and 10V.

What is the operating temperature range for the TK10V60W,LVQ?

The operating channel temperature is up to 150°C, with a storage temperature range of -55°C to 150°C.

What package type is the TK10V60W,LVQ MOSFET supplied in?

It is supplied in a 4-DFN-EP (8x8) package, designed for surface mounting.

What is the RoHS status of the TK10V60W,LVQ?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Toshiba
Current	9.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	83.3 W
Rds On (Max) @ Id, Vgs	380mOhm
Storage Temperature	-55 to 150 °C
Supplier Device Package	4-DFN-EP (8x8)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.7V