| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
215 pcs
|
215 pcs | On Request | 1 | On Request | On Request | 1411+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK10S04K3L(T6L1,NQ is an N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for use in various electronic circuits requiring efficient power switching.
The MOSFET features a maximum drain-source voltage (Vdss) of 40V and a continuous current rating of 10A. Its on-resistance (Rds On) is specified as a maximum of 28mOhm at 5A and 10V gate-source voltage. The gate charge (Qg) is 10nC at 10V, and the gate threshold voltage (Vgs(th)) is 3V at 1mA.
With a maximum power dissipation of 25W (Tc) and an operating temperature range up to 175°C (TJ), this component is suitable for demanding thermal environments. The input capacitance (Ciss) is 410pF at 10V.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, identified as DPAK+. It utilizes a surface mount configuration, making it convenient for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
TO-252-3, DPaK (2 Leads + Tab), SC-63
175°C
Maximum 3V at 1mA drain current
28 mOhm maximum at 5A drain current and 10V gate voltage
410 pF at Vds = 10V
10 nC at Vgs = 10V