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TK10Q60W The Toshiba TK10Q60W is an N-Channel MOSFET with a 600V drain-source voltage and 9.7A continuous drain current. It is housed in an I-Pak through-hole package.
Mfr Part #:

TK10Q60W

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK10Q60W is an N-Channel MOSFET with a 600V drain-source voltage and 9.7A continuous drain current. It is housed in an I-Pak through-hole package.
✓ Total Stock: 267 pcs

TK10Q60W Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
Non-Authorised Inventory information
267 pcs
On Request
267 pcs On Request 1 On Request On Request 15+ On Request On Request
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TK10Q60W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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TK10Q60W Description

Short technical summary and product information.

The TK10Q60W from Toshiba Semiconductor and Storage is an N-Channel MOSFET designed for power management applications. It features a high drain-source voltage rating of 600V and a continuous drain current of 9.7A at 25°C.

 

Key electrical characteristics include a maximum on-resistance of 430mOhm at 4.9A and 10V gate drive voltage, a gate threshold voltage of 3.7V, and a maximum gate charge of 20nC. The device has a maximum power dissipation of 80W and an operating temperature range up to 150°C.

 

This MOSFET is supplied in an I-Pak package, designed for through-hole mounting. The package type is TO-251-3 Stub Leads, IPak. Its robust specifications make it suitable for various power switching applications.

TK10Q60W Quick Information

Product Type: MOSFET
Series: DTMOSIV
Canonical Name: TK10Q60W N-Channel MOSFET
Subcategory: Single

TK10Q60W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK10Q60W Features

  • N-Channel MOSFET technology.
  • 600V drain-to-source voltage rating.
  • 9.7A continuous drain current.
  • 80W maximum power dissipation.
  • I-Pak through-hole package.

TK10Q60W Applications

  • Used in AC-DC switching power supplies.
  • Ideal for power factor correction circuits.
  • Suitable for LED lighting driver applications.
  • Employed in high-voltage DC-DC converters.
  • Applicable for industrial power switching modules.

TK10Q60W FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the TK10Q60W?

The drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 9.7A.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 430mOhm at 4.9A and 10V.

What is the operating temperature range?

The operating temperature is up to 150°C.

What type of MOSFET is the TK10Q60W?

It is an N-Channel MOSFET using Metal Oxide technology.

What package is the TK10Q60W supplied in?

It is supplied in an I-PAK package, specifically TO-251-3 Stub Leads, IPak, for through-hole mounting.

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