| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | 1533+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK10A80E,S4X is an N-Channel Silicon MOSFET designed for applications such as switching voltage regulators. It features a low drain-source on-resistance of 0.7 Ohm (typical) and a low leakage current of 10 µA (max) at 640V.
Key electrical characteristics include a drain-source voltage (Vdss) of 800V, a continuous drain current (Id) of 10A, and a maximum power dissipation of 50W. The gate threshold voltage (Vgs(th)) ranges from 2.5V to 4.0V at 1mA.
This MOSFET is housed in a TO-220SIS package, suitable for through-hole mounting. It operates within a channel temperature range of -55°C to 150°C. The component exhibits a low typical on-resistance and is designed for efficient power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V
10A at 25°C ambient temperature.
0.7 Ohm (typical) with a maximum of 1 Ohm at 5A drain current and 10V gate voltage.
TO-220-3 Full Pack (also referred to as TO-220SIS).
-55°C to 150°C.
2.5V to 4.0V at 1mA drain current.
50W at case temperature 25°C.