| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK10A60D(STA4,Q,M) is an N-Channel MOSFET designed for power switching applications. It offers a high drain-source voltage (Vdss) of 600V and a continuous current capability of 10A. The MOSFET has a maximum on-resistance (Rds On) of 750mOhm at 5A and 10V gate-source voltage.
Key electrical characteristics include an input capacitance (Ciss) of 1350pF at 25V and a gate charge (Qg) of 25nC at 10V. The gate-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 4V at 1mA. The device operates at temperatures up to 150°C (TJ).
Packaged in a TO-220-3 Full Pack (TO-220SIS), this component is suitable for through-hole mounting. Its power dissipation is rated at a maximum of 45W (Tc). The RoHS status is compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10A at ambient temperature.
750mOhm maximum at 5A drain current and 10V gate-source voltage.
4V maximum at 1mA drain current.
TO-220-3 Full Pack (supplier package TO-220SIS).
150°C.
45W at case temperature.