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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | 1513+ | On Request | On Request |
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The Toshiba TK10A50W,S5X(M is a high-performance N-Channel MOSFET designed for various power applications. It features a substantial drain-source breakdown voltage of 500V, making it suitable for high-voltage circuits. The continuous drain current rating is 9.7A, allowing it to handle significant current loads.
This MOSFET is housed in a TO-220SIS package, which is designed for through-hole mounting. This mounting type is common in power electronics for its ease of assembly and thermal management capabilities. The device's specifications suggest it is intended for applications requiring robust power switching and voltage handling.
Key electrical characteristics include its N-channel enhancement mode operation. While specific details on gate threshold voltage, on-resistance, and gate charge are not detailed here, the provided voltage and current ratings indicate its suitability for power supply circuits, motor control, and other power switching applications where reliability and performance are critical.
The drain-source breakdown voltage is 500V.
The continuous drain current is 9.7A.
The TK10A50W,S5X(M is supplied in a TO-220SIS package.
The TK10A50W,S5X(M is mounted using the through-hole method.