| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK100L60W,VQ is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage rating of 600V and a continuous current capability of 100A.
The MOSFET features a low maximum on-resistance of 18mOhm at 50A and 10V, along with a gate charge of 360nC at 10V. The input capacitance is rated at 15000pF at 30V, and the gate threshold voltage is a maximum of 3.7V at 5mA.
With a power dissipation capacity of up to 797W (Tc), this device is suitable for demanding applications. It operates at temperatures up to 150°C (TJ).
The component is packaged in a TO-3PL (TO-3P(L)) case and designed for through-hole mounting, making it suitable for various power circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
100A at ambient temperature.
18mOhm maximum at 50A drain current and 10V gate-source voltage.
360nC maximum at 10V gate-source voltage.
150°C.
Through-hole TO-3PL (TO-3P(L)).
3.7V maximum at 5mA drain current.