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1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | 1034+PB | On Request | On Request |
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The Toshiba TK100F06K3 is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) from Toshiba's U-MOSIV series. It is engineered for demanding applications such as switching regulators, DC-DC converters, and motor drive systems.
Key electrical characteristics include a maximum drain current of 100A and a drain-source voltage rating of 60V. The device boasts a low drain-source on-resistance (RDS(ON)) of typically 4.0mΩ at 50A drain current and 10V gate-source voltage, ensuring efficient power transfer and reduced heat generation. Its high forward transfer admittance (|Yfs|) of 174 S (typ.) at 10A drain current and 10V drain-source voltage indicates excellent switching speed and control.
The TK100F06K3 features a low leakage current (IDSS) of 10μA maximum at 60V drain-source voltage. It operates as an enhancement-mode device with a typical gate threshold voltage (Vth) of 3V. This MOSFET is designed for surface mount applications, likely in a TO-263 package, facilitating integration into compact electronic designs.
This component is suitable for power management circuits requiring efficient switching and robust performance. Its specifications make it a reliable choice for power supplies, motor control, and other high-current switching applications.
The maximum drain current (ID) for the TK100F06K3 is 100A.
The drain-source voltage (VDS) rating for the TK100F06K3 is 60V.
The typical drain-source on-resistance (RDS(ON)) for the TK100F06K3 is 4.0mΩ at a drain current of 50A and gate-source voltage of 10V.
The typical forward transfer admittance (Gfs) of the TK100F06K3 is 174 S at a drain current of 10A and drain-source voltage of 10V.
The maximum leakage current (IDSS) for the TK100F06K3 is 10μA at a drain-source voltage of 60V.
The typical gate threshold voltage (Vth) for the TK100F06K3 is 3V.