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TK100E10NE The Toshiba TK100E10NE is an N-Channel MOSFET in a TO-220AB package. It offers a 100V drain-source voltage and 100A continuous drain current.
Mfr Part #:

TK100E10NE

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK100E10NE is an N-Channel MOSFET in a TO-220AB package. It offers a 100V drain-source voltage and 100A continuous drain current.
✓ Total Stock: 300 pcs

TK100E10NE Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
300 pcs
On Request
300 pcs On Request 1 On Request On Request 16+ On Request On Request
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TK100E10NE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Operating Temperature
Power Dissipation
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TK100E10NE Description

Short technical summary and product information.

The Toshiba TK100E10NE is a high-performance N-Channel MOSFET designed for various electronic applications. It features a robust TO-220AB package, suitable for through-hole mounting.

 

Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 100A at 50A test conditions. The on-resistance (Rds) is rated at 5.1mΩ at 50A and 10V, ensuring efficient power handling. The device operates across a wide temperature range from -55°C to 175°C, making it suitable for demanding environments. The power dissipation (Pd) is 230W, and the gate-source voltage (Vgs) is ±20V.

 

This MOSFET is ideal for power switching and amplification circuits where reliability and performance are critical. Its specifications make it a versatile component for industrial and commercial applications requiring robust power management solutions.

TK100E10NE Quick Information

Product Type: MOSFET
Series: TK
Canonical Name: Toshiba TK100E10NE N-Channel MOSFET
Subcategory: Universal MOSFETs

TK100E10NE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK100E10NE Features

  • N-Channel MOSFET for power applications.
  • 100V drain-source voltage rating.
  • 100A continuous drain current.
  • Low 5.1mΩ on-resistance.
  • Wide -55°C to 175°C operating temperature.

TK100E10NE Applications

  • Suitable for power switching circuits.
  • Ideal for amplification applications.
  • Used in demanding environments.
  • Robust power management solutions.

TK100E10NE FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the TK100E10NE?

The drain-source voltage is 100V.

What is the continuous drain current for the TK100E10NE?

The continuous drain current is 100A.

What is the on-resistance of the TK100E10NE?

The on-resistance is 5.1mΩ at 50A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the TK100E10NE MOSFET in?

The TK100E10NE is in a TO-220AB package.

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