| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,500 pcs
|
30500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number TK100E10N1,S1X from Toshiba, is engineered for robust performance in power electronics. It features a high continuous drain current rating of 100A and a drain-to-source voltage of 100V, making it suitable for demanding applications.
The device is housed in a TO-220 package, facilitating through-hole mounting. Key electrical characteristics include a low on-resistance of 3.4mOhm at 50A and 10V, and a gate charge of 140nC. The operating temperature range extends up to 150°C (TJ), ensuring reliability under thermal stress.
With its Metal Oxide Semiconductor (MOSFET) technology, the TK100E10N1,S1X provides efficient switching and power handling capabilities. Its specifications make it a viable component for power supplies, motor control, and other high-power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 100V.
The continuous drain current (Id) is 100A (Ta).
The maximum on-resistance (Rds On) is 3.4mOhm at 50A, 10V.
The package type is TO-220-3.
The operating temperature is up to 150°C (TJ).