| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,900 pcs
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5900 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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This Toshiba TK100E08N1,S1X is an N-Channel MOSFET with a drain-source voltage rating of 80V and a continuous drain current capability of 100A (Ta). It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-220-3 package suitable for through-hole mounting.
The device operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 255W (Tc). Key electrical characteristics include a maximum on-resistance of 3.2mOhm at 50A and 10V, a gate charge of 130 nC at 10V, and an input capacitance of 9000 pF at 40V. The gate threshold voltage is 4V at 1mA, with a maximum gate-source voltage of ±20V.
This MOSFET is RoHS3 compliant, has an MSL of 1 Unlimited, and is REACH unaffected. Its through-hole mounting type makes it suitable for various power electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
100A at Ta.
TO-220-3 (through-hole).
150°C.
3.2mOhm maximum at 50A, 10V.
4V maximum at 1mA.
N-channel.