| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,269 pcs
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6269 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Toshiba TK09H90A is a Field Effect Transistor (FET) manufactured by Toshiba. This component is designed for applications requiring high voltage handling, with a specified breakdown voltage of 900V.
Key electrical characteristics include a minimum Drain-Source Resistance of 1.3 Ohms and a maximum Power Dissipation of 150 Watts. The device can operate at temperatures up to 150°C, making it suitable for demanding environments.
With 3 terminals, the TK09H90A is a single-channel FET. Its RoHS3 compliance indicates adherence to environmental standards for hazardous substances. The component is classified under the Moisture Sensitivity Level 1 (MSL 1) category, signifying unlimited shelf life under recommended conditions.
This transistor is part of the broader category of Discrete Semiconductor Products, specifically within the Transistors - FETs, MOSFETs - Single subcategory. Its specifications suggest utility in power switching, amplification, or control circuits where high voltage is a primary concern.
The maximum operating junction temperature is 150°C.
The maximum drain-source breakdown voltage is 900V.
The maximum power dissipation is 150W.
The minimum drain-source on-resistance is 1.3Ω.
The TK09H90A has 3 terminals.
The device is designed for surface mount assembly.