| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TJ8S06M3L(T6L1,NQ) is a P-Channel MOSFET designed for power semiconductor applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 8A at ambient temperature.
The MOSFET has an on-resistance of 104mOhm at 4A and 10V, with a gate charge of 19nC at 10V. The gate-source voltage ranges from +10V to -20V, and the threshold voltage is 3V at 1mA. Input capacitance is rated at 890pF at 10V.
With a maximum power dissipation of 27W (Tc) and a maximum operating temperature of 175°C, this MOSFET is suitable for demanding thermal environments. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package and supplied on a reel.
This component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-252-3, DPak (2 Leads + Tab), SC-63.
175°C.
8 A.
104 mOhm at 4A, 10V.
19 nC at 10V.
890 pF at 10V.