TJ50S06M3L(T6L1,NQ The Toshiba TJ50S06M3L(T6L1,NQ is a P-Channel MOSFET with a 60V drain-source voltage and 50A continuous current rating. It is designed for surface mount applications.
Mfr Part #:

TJ50S06M3L(T6L1,NQ

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TJ50S06M3L(T6L1,NQ is a P-Channel MOSFET with a 60V drain-source voltage and 50A continuous current rating. It is designed for surface mount applications.
✓ Total Stock: 5,400 pcs
$ Price Range: $2.56

TJ50S06M3L(T6L1,NQ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 17+20+22+ On Request On Request
Non-Authorised Inventory information
1,400 pcs
1400 pcs On Request 1 On Request On Request 23+ On Request On Request

TJ50S06M3L(T6L1,NQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TJ50S06M3L(T6L1,NQ Description

Short technical summary and product information.

This P-Channel MOSFET from Toshiba, part number TJ50S06M3L(T6L1,NQ, offers a drain-source voltage of 60V and a continuous drain current of 50A. It features a low on-resistance of 13.8mOhm maximum at 25A and 10V gate-source voltage.

 

The device is constructed using MOSFET (Metal Oxide) technology and is suitable for surface mount applications, packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63. The maximum power dissipation is rated at 90W (Tc), and it operates at temperatures up to 175°C (TJ).

 

Key electrical characteristics include a gate charge of 124 nC maximum at 10V and an input capacitance of 6290 pF maximum at 10V. The gate threshold voltage is 3V maximum at 1mA, with drive voltages specified between 6V and 10V.

TJ50S06M3L(T6L1,NQ Quick Information

Product Type: MOSFET
Canonical Name: TJ50S06M3L(T6L1,NQ P-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TJ50S06M3L(T6L1,NQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TJ50S06M3L(T6L1,NQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TJ50S06M3L(T6L1,NQ Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • 50A continuous drain current rating.
  • Low 13.8mOhm Rds On at 25A, 10V.
  • Surface mountable DPAK package.
  • Operates up to 175°C junction temperature.

TJ50S06M3L(T6L1,NQ Applications

  • Suitable for power switching circuits.
  • Ideal for high current applications.
  • Used in compact electronic designs.
  • Designed for demanding thermal environments.

TJ50S06M3L(T6L1,NQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TJ50S06M3L?

60V.

What package is the TJ50S06M3L available in?

TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

What is the maximum operating junction temperature?

175°C.

What is the continuous drain current rating?

50A at ambient temperature.

What is the typical on-resistance?

13.8 mOhm maximum at 25A, 10V.

What is the gate charge?

124 nC at 10V.

What is the input capacitance?

6290 pF at 10V Vds.

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