| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 17+20+22+ | On Request | On Request | |
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Toshiba, part number TJ50S06M3L(T6L1,NQ, offers a drain-source voltage of 60V and a continuous drain current of 50A. It features a low on-resistance of 13.8mOhm maximum at 25A and 10V gate-source voltage.
The device is constructed using MOSFET (Metal Oxide) technology and is suitable for surface mount applications, packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63. The maximum power dissipation is rated at 90W (Tc), and it operates at temperatures up to 175°C (TJ).
Key electrical characteristics include a gate charge of 124 nC maximum at 10V and an input capacitance of 6290 pF maximum at 10V. The gate threshold voltage is 3V maximum at 1mA, with drive voltages specified between 6V and 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
175°C.
50A at ambient temperature.
13.8 mOhm maximum at 25A, 10V.
124 nC at 10V.
6290 pF at 10V Vds.