| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TJ20A10M3(STA4,Q is a P-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for through-hole mounting and comes in a TO-220 package.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 20A. The on-state resistance (Rds(on)) is a maximum of 90mΩ at 10A and 10V, with a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. The maximum gate source voltage is ±20V, and the input capacitance (Ciss) is 5.5nF at 10V. Gate charge (Qg) is a maximum of 120nC at 10V.
This MOSFET operates within an industrial temperature range of -55°C to 150°C and has a maximum power dissipation of 35W (Tc). It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The maximum continuous drain current is 20A.
The on-state resistance is a maximum of 90mOhm at 10A, 10V.
The gate charge is a maximum of 120nC at 10V.
The operating temperature range is -55°C to 150°C.
This MOSFET is in a TO-220 package.
This MOSFET is mounted using through-hole mounting.