BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TJ20A10M is a P-Channel Silicon MOS Field Effect Transistor from the U-MOSVI series, suitable for switching regulator applications. It features a low drain-source ON resistance of 63 mΩ (typ.) and a high forward transfer admittance of 50 S (typ.). The device also exhibits low leakage current, with IDSS at a maximum of -10 A when VDS is -100 V.
This MOSFET is housed in an SC-67 package. Its design focuses on efficiency in power conversion circuits, making it a component for designers seeking reliable performance in switching applications.
Key electrical characteristics include its low ON-resistance, which minimizes power loss during conduction, and its high transconductance, indicating efficient control of the output current by the input gate voltage. These parameters are crucial for optimizing the performance and thermal management of power supply designs.
The typical drain-source ON resistance is 63 mΩ when VGS is -10 V and ID is -10 A.
The typical forward transfer admittance is 50 S when VDS is -10 V and ID is -10 A.
The maximum leakage current (IDSS) is -10 A when VDS is -100 V.
The TJ20A10M is available in the SC-67 package.