| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The TJ10S04M3L(T6L1,NQ from Toshiba is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 40V. It can handle a continuous drain current (Id) of 10A at 25°C and has a maximum power dissipation of 27W (Tc).
This MOSFET features a low Rds On of 44mOhm at 5A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 1mA. The operating temperature range is up to 175°C (TJ). It is suitable for surface mount applications and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The technology used is MOSFET (Metal Oxide), and it supports drive voltages between 6V and 10V. The maximum gate-source voltage (Vgs) is rated at +10V and -20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage (Vdss) is 40 V.
The continuous drain current (Id) at 25°C is 10A (Ta).
The Rds On is a maximum of 44mOhm at 5A and 10V.
The operating temperature is 175°C (TJ).
It is a P-Channel MOSFET.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is surface mountable.