| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIS75 is an N-Channel JFET manufactured by ON Semiconductor, suitable for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. It operates with a drain-gate voltage of up to 30V and a gate-source voltage down to -30V.
Key electrical characteristics include a zero-gate voltage drain current of 8mA (typ) at 15V, a drain-source on-resistance of 60Ω, and input capacitance of 18pF. Switching times are also specified, with turn-on time at 10ns and turn-off time at 100ns.
This device is housed in a TO-92-3 package, designed for through-hole mounting. It has a power dissipation rating of 350mW at 25°C and an operating temperature range from -55°C to +150°C.
The TIS75 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage is 30V and the gate-source voltage is -30V. The gate-source breakdown voltage is -30V.
The operating and storage junction temperature range is -55°C to +150°C.
The TIS75 is available in a TO-92-3 through-hole package (also referred to as TO-226AA).
The zero-gate voltage drain current is typically 8mA, with a maximum of 80mA at VDS=15V.
Rise time and turn-on time are both 10ns; turn-off time is 100ns under specified test conditions.