| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 9736 | On Request | On Request |
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The NTE175 is a bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc. This NPN type transistor is designed for various electronic applications requiring robust performance.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 2A. The transistor exhibits a typical DC current gain (hFE) of 40 at 100mA and 10V, with a saturation voltage (Vce Sat) of 750mV at 125mA and 1A. Its transition frequency is 15MHz, and it can dissipate up to 35W of power.
The NTE175 operates within a temperature range of -65°C to 200°C. It is supplied in a TO-66 package, suitable for through-hole mounting. The component is RoHS3 compliant, indicating adherence to environmental standards.
This transistor is suitable for applications requiring high voltage switching and amplification. Its specifications make it a reliable choice for power supply circuits, audio amplifiers, and general-purpose switching applications where a 300V rating is necessary.
| Qty | Low | High |
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| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300V.
The maximum collector current is 2A.
The maximum power dissipation is 35W.
The TIP50 is available in a TO-66 (TO-213AA, TO-66-2) through-hole package.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain is 40 at 100mA collector current and 10V collector-emitter voltage.
The transition frequency is 15MHz.