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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
319 pcs
|
319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Human Body Model | |
| ESD Machine Model | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| PD (Maximum @ Tc=25 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Unclamped inductive load energy | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP41AG from On Semiconductor is a complementary silicon plastic power transistor designed for general purpose amplifier and switching applications. This NPN transistor offers a collector-emitter voltage of 60V and a continuous collector current of 6A.
Key electrical characteristics include a DC current gain (hFE) of 15 minimum at 3A and 4V, and a Vce saturation of 1.5V maximum at 600mA and 6A. The device operates at frequencies up to 3MHz.
Packaged in a TO-220-3 configuration, the TIP41AG is designed for through-hole mounting. It has a maximum power dissipation of 65W at 25°C case temperature and 2W at 25°C ambient temperature. The operating and storage junction temperature range is from -65°C to +150°C.
This device is RoHS3 compliant and meets UL 94 V-0 standards for flammability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
The TIP41AG is available in a TO-220-3 through-hole package (supplier device package TO-220).
The operating and storage junction temperature range is from -65°C to +150°C.
The maximum continuous collector current (IC) is 6 Adc.
The minimum DC current gain (hFE) is 15 at Ic = 3 A and Vce = 4 V.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.5 V at Ib = 600 mA and Ic = 6 A.
Total power dissipation is 65 W at case temperature 25°C, and 2 W at ambient temperature 25°C.