TIP36C The TIP36C is a PNP power transistor from On Semiconductor designed for general-purpose applications. It offers a 100V collector-emitter voltage and 25A continuous collector current.
Mfr Part #:

TIP36C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The TIP36C is a PNP power transistor from On Semiconductor designed for general-purpose applications. It offers a 100V collector-emitter voltage and 25A continuous collector current.
Total Stock: 5 pcs
$ Price Range: $0.51

TIP36C Available from 1 distributor

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TIP36C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector - Emitter Saturation Voltage
Collector Current
Collector-Base Voltage
Collector-Emitter Voltage
Continuous Collector Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Gain-Bandwidth Product
Maximum DC Collector Current
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance, Junction-To-Free-Air
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

TIP36C Description

Short technical summary and product information.

The TIP36C is a complementary PNP silicon power transistor manufactured by On Semiconductor. It is designed for general-purpose power amplifier and switching applications. This transistor features a high collector current capability of 25A continuous and a peak current of 40A. The maximum collector-emitter voltage is 100V.

 

With a total power dissipation of 125W at 25°C, the TIP36C is suitable for demanding applications. It operates within a junction temperature range of -65°C to +150°C. The transistor is available in a TO-247-3 package, which is a through-hole mounting type.

 

Key electrical characteristics include a DC current gain (hFE) of 15 minimum at 15A and 4V, and a Vce saturation of 4V maximum at 5A and 25A. The gain bandwidth product is 3MHz. The thermal resistance from junction to case is 1.0°C/W, and from junction to free air is 35.7°C/W.

 

This device is designed for applications requiring robust power handling and amplification capabilities.

TIP36C Quick Information

Product Type: PNP Power Transistor
Canonical Name: TIP36C PNP Power Transistor
Subcategory: Single BJT

TIP36C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIP36C Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP36C Features

  • PNP silicon power transistor.
  • 100V collector-emitter voltage.
  • 25A continuous collector current.
  • 125W total power dissipation.
  • TO-247-3 through-hole package.

TIP36C Applications

  • Power switching and linear amplifiers.
  • Motor and actuator control circuits.
  • High-current regulator and converter stages.
  • Audio output and power supply designs.

TIP36C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the TIP36C?

The maximum collector-emitter voltage (VCEO) is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 25 A.

What package type is the TIP36C available in?

The TIP36C is available in a TO-247-3 (SOT-93) through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -65°C to +150°C.

What is the power dissipation of the TIP36C?

The maximum power dissipation is 125 W at a case temperature of 25°C.

What is the DC current gain (hFE) of the TIP36C?

The minimum DC current gain (hFE) is 15 at 15 A collector current and 4 V collector-emitter voltage.

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