| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The TIP35B is a silicon power transistor manufactured by STMicroelectronics, suitable for general-purpose power amplifier and switching applications. It is designed with an NPN polarity and comes in a TO-218 package.
Key electrical characteristics include a maximum collector current of 25A continuous and 40A peak, with a continuous base current of 5A. The collector-emitter voltage is rated at 80V, and the collector-base voltage is also 80V. The device exhibits a typical DC gain (hFE) of 40 at 15A and a minimum current gain bandwidth product of 3.0 MHz at 1.0A.
Thermal performance is supported by a maximum power dissipation of 125W at 25°C case temperature, with a derating of 1.0W/°C above that temperature. The junction to case thermal resistance is 1.0°C/W, and the junction to ambient thermal resistance is 35.7°C/W. The operating and storage temperature range is from -65°C to +150°C.
This transistor is designed for robust performance in power applications. Its specifications make it suitable for various power supply circuits, audio amplifiers, and switching regulators where reliable power handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 25A.
The collector-emitter voltage is 80V.
The maximum power dissipation is 125W at 25°C case temperature.
The operating temperature range is -65°C to +150°C.
The TIP35B is supplied in a TO-218 package.
The typical DC gain (hFE) is 40 at 15A.