| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor TIP35AG is a high-power NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 25A.
This transistor is rated for a maximum power dissipation of 125W. It features a DC current gain (hFE) of at least 15 at 15A and 4V. The transition frequency is 3MHz, and the saturation voltage (Vce) is a maximum of 4V at 5A collector current.
The TIP35AG is packaged in a TO-247-3 case and is designed for through-hole mounting. Its robust specifications make it suitable for power switching and amplification circuits where reliability and performance are critical.
Key electrical characteristics include a collector cutoff current of 1mA. The device is part of the TIP35,36A,B,C family of transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60V.
The maximum continuous collector current is 25A.
The maximum power dissipation is 125W.
The minimum DC current gain (hFE) is 15 at 15A and 4V.
The package type is TO-247-3.
The TIP35AG is mounted using the through-hole method.