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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Base Emitter On Voltage (Maximum @ IC = 10 A, VCE = 4.0 V) | |
| Base Emitter On Voltage (Maximum @ IC = 3.0 A, VCE = 4.0 V) | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Emitter Cutoff Current (Maximum @ VCE = Rated VCEO, VEB = 0) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 3.0 A, IB = 0.3 A) | |
| Collector-Base Voltage | |
| Collector-Emitter Cutoff Current (Maximum @ VCE = 30 V, IB = 0) | |
| Collector-Emitter Cutoff Current (Maximum @ VCE = 60 V, IB = 0) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = 10 A, IB = 2.5 A) | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ IC = 1.0 A, VCE = 4.0 V) | |
| DC Current Gain Hfe (Minimum @ IC = 3.0 A, VCE = 4.0 V) | |
| Derate above 25°C | |
| ESD Rating (Human Body Model) | |
| ESD Rating - Machine Model | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Small Signal Current Gain (hfe) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP33C is an NPN silicon power transistor designed for general-purpose power amplifier and switching applications. It features a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 10A, with a peak current capability of 15A.
With a total device dissipation (PD) of 80W at 25°C, this transistor is suitable for power handling. The operating and storage junction temperature range is from -65°C to +150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 3A and 4V, and a collector-emitter saturation voltage (VCE(sat)) of up to 4.0V at 10A and 2.5A base current.
The transistor is housed in a TO-247-3 package, suitable for through-hole mounting. It also exhibits a current-gain bandwidth product (fT) of 3.0 MHz. ESD ratings include Machine Model C (>400V) and Human Body Model 3B (>8000V).
This device is designed for applications requiring robust power amplification and switching capabilities. Its specifications make it a reliable choice for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the TIP33C is 100 Vdc.
The TIP33C has a continuous collector current rating of 10 Adc.
The total device dissipation (PD) for the TIP33C at 25°C is 80 Watts.
The operating and storage junction temperature range for the TIP33C is -65°C to +150°C.
The TIP33C is supplied in a TO-247-3 package.
Yes, the TIP33C is RoHS3 compliant.