| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP33A is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. It is designed for power switching and amplification applications.
This transistor offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 10A. It has a power dissipation rating of 80W, making it suitable for medium-power applications. The DC current gain (hFE) is a minimum of 100 at 3A collector current and 4V collector-emitter voltage.
The TIP33A operates within a temperature range of -65°C to 150°C (TJ). It is packaged in a TO-218-3 through-hole configuration, which facilitates easy mounting on printed circuit boards.
Key electrical characteristics include its 60V breakdown voltage and 10A current capability, along with a frequency response up to 3MHz. The through-hole mounting type simplifies integration into existing designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the TIP33A is 60V.
The maximum continuous collector current for the TIP33A is 10A.
The power dissipation rating of the TIP33A transistor is 80W.
The minimum DC current gain (hFE) for the TIP33A is 100 at 3A collector current and 4V collector-emitter voltage.
The operating temperature range for the TIP33A is -65°C to 150°C (TJ).
The TIP33A is in a TO-218-3 package.
The TIP33A is mounted using the through-hole method.