TIP32G The ON Semiconductor TIP32G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

TIP32G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor TIP32G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 40V collector-emitter voltage and 3A continuous collector current.
Total Stock: 8,600 pcs
$ Price Range: $0.51

TIP32G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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8,600 pcs
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TIP32G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Gain-Bandwidth Product
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum) @ TA=25°C
SVHC Present
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

TIP32G Description

Short technical summary and product information.

The ON Semiconductor TIP32G is a PNP silicon power transistor designed for general purpose amplifier and switching applications. It is housed in a compact TO-220 package, making it suitable for various electronic designs.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 3A. The device offers a peak collector current of 5A and a continuous base current of 1A. Power dissipation is rated at 40W at a case temperature of 25°C, with a derating above this temperature. The transistor exhibits a DC current gain (hFE) of at least 10 at 3A and 4V, and a maximum Vce saturation of 1.2V at 375mA and 3A.

 

Thermal management is facilitated by a junction-to-case thermal resistance of 3.125°C/W and a junction-to-ambient thermal resistance of 62.5°C/W. The operating and storage junction temperature range is from -65°C to +150°C.

 

This transistor is suitable for applications requiring moderate power handling and amplification capabilities. Its through-hole mounting type and TO-220 package simplify integration into circuit boards.

TIP32G Quick Information

Product Type: PNP Power Transistor
Canonical Name: TIP32G PNP Power Transistor
Subcategory: PNP

TIP32G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIP32G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP32G Features

  • PNP silicon power transistor.
  • 40V collector-emitter voltage rating.
  • 3A continuous collector current.
  • 40W power dissipation at 25°C case.
  • TO-220 package for through-hole mounting.

TIP32G Applications

  • General purpose amplifier circuits.
  • Switching applications.
  • Power supply regulation.
  • Audio amplifier stages.

TIP32G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the TIP32G?

40 Vdc.

What package is the TIP32G available in?

TO-220-3 (through-hole).

What is the operating junction temperature range?

-65°C to 150°C.

What is the continuous collector current rating?

3 Adc.

What is the DC current gain (hFE) at 3A?

Minimum 10 at Ic=3A, Vce=4V.

What is the gain bandwidth product?

3 MHz.

What is the thermal resistance junction-to-case?

3.125 °C/W.

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