| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,014 pcs
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1014 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor TIP32A is a PNP power transistor designed for general purpose amplifier and switching applications. It is housed in a compact TO-220-3 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 3A. The device offers a DC current gain (hFE) of 10 minimum at 3A and 4V, with a Vce saturation of 1.2V maximum at 375mA and 3A. Its bandwidth (fT) is rated at 3MHz.
The transistor can dissipate up to 40W of power at a case temperature of 25°C, derating to 2W at an ambient temperature of 25°C. The operating and storage junction temperature range is from -65°C to +150°C. Thermal resistance from junction to case is 3.125°C/W, and junction to ambient is 62.5°C/W.
This device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. It is designed for reliable performance in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 60Vdc.
The TIP32A is packaged in a TO-220-3 through-hole package.
The continuous collector current is 3A, with a peak current of 5A.
Maximum power dissipation is 40W at case temperature 25°C, and 2W at ambient temperature 25°C.
The operating and storage junction temperature range is -65°C to +150°C.
The minimum DC current gain is 10 at Ic=3A and Vce=4V.
The minimum transition frequency (fT) is 3 MHz.