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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP31CTU is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for a variety of switching and amplification applications.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 100V and a continuous collector current (Ic) of 3A. The transistor offers a DC current gain (hFE) of at least 10 at 3A and 4V. Its saturation voltage (Vce(sat)) is a maximum of 1.2V at 375mA base current and 3A collector current. The device operates at frequencies up to 3MHz and dissipates up to 2W of power.
Packaged in a standard TO-220-3 configuration, the TIP31CTU is designed for through-hole mounting. Its operating junction temperature can reach up to 150°C.
This transistor is suitable for use in power supply circuits, audio amplifiers, and general-purpose switching applications where moderate power handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 100V.
The TIP31CTU is available in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.
3A continuous.
2W.
Minimum 10 at 3A collector current and 4V VCE.
Maximum 1.2V at 375mA base current and 3A collector current.