TIP31C The TIP31C is an NPN bipolar transistor from ON Semiconductor, rated for 100V and 3A. It features a TO-220 package and is suitable for general-purpose amplifier and switching applications.
Mfr Part #:

TIP31C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The TIP31C is an NPN bipolar transistor from ON Semiconductor, rated for 100V and 3A. It features a TO-220 package and is suitable for general-purpose amplifier and switching applications.
Total Stock: 210 pcs
$ Price Range: $0.51

TIP31C Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120 pcs
120 pcs On Request 1 On Request On Request 1235+ On Request On Request
Non-Authorised Inventory information
90 pcs
90 pcs On Request 1 On Request On Request On Request On Request On Request

TIP31C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Kind of Package
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

TIP31C Description

Short technical summary and product information.

The TIP31C is a silicon NPN power transistor manufactured by ON Semiconductor, designed for general-purpose amplifier and switching applications. It offers a collector-emitter voltage (VCEO) of up to 100V and a continuous collector current (IC) of 3A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 3A and 4V, and a Vce saturation of 1.2V at 375mA and 3A. The transistor operates within a junction temperature range of -65°C to 150°C.

 

This component is housed in a standard TO-220 package, suitable for through-hole mounting. The power dissipation is rated at 40W at a case temperature of 25°C, with a thermal resistance from junction to case of 3.125 °C/W and junction to ambient of 62.5 °C/W.

 

The TIP31C is RoHS 3 compliant, MSL 1, and REACH unaffected, making it suitable for various electronic designs requiring a robust NPN power transistor.

TIP31C Quick Information

Product Type: Bipolar Transistor
Canonical Name: TIP31C NPN Bipolar Transistor
Subcategory: NPN

TIP31C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIP31C Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP31C Features

  • NPN bipolar transistor for general applications.
  • Rated for 100V collector-emitter voltage.
  • Handles up to 3A continuous collector current.
  • Standard TO-220 package for through-hole mounting.
  • Wide operating temperature range of -65°C to 150°C.

TIP31C Applications

  • General purpose switching and linear amplification.
  • Power management and regulator circuits.
  • Motor and relay driver stages.
  • Audio output and driver stages.

TIP31C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the TIP31C?

The maximum collector-emitter voltage (VCEO) is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 3 Adc.

What is the power dissipation of the TIP31C?

The total power dissipation is 40 W at a case temperature of 25°C, and 2 W at an ambient temperature of 25°C.

What package is the TIP31C available in?

The TIP31C is available in a TO-220-3 through-hole package.

What is the operating temperature range of the TIP31C?

The operating junction temperature range is -65°C to +150°C.

What is the DC current gain (hFE) of the TIP31C?

The minimum DC current gain (hFE) is 10 at a collector current of 3A and collector-emitter voltage of 4V.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 1.2V at a base current of 375mA and collector current of 3A.

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