| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,700 pcs
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1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics TIP31A is a complementary silicon plastic power transistor designed for general purpose amplifier and switching applications. It is housed in a compact TO-220AB package.
Key electrical characteristics include a collector-emitter sustaining voltage (VCEO) of 60 Vdc, a continuous collector current (IC) of 3 Adc, and a peak collector current of 5 Adc. The transistor has a maximum base current (IB) of 1 Adc. Its collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.2 Vdc at 3.0 Adc. The high current gain-bandwidth product (fT) is a minimum of 3.0 MHz at 500 mAdc.
Thermal performance is rated at 2 Watts power dissipation at 25°C ambient temperature (TA) and 40 Watts at 25°C case temperature (TC). The operating and storage junction temperature range is from -65°C to +150°C.
This NPN transistor is suitable for through-hole mounting and is provided in a TO-220 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter voltage (VCEO) is 60 Vdc.
The maximum continuous collector current (IC) is 3 Adc.
The maximum power dissipation is 40 Watts at a case temperature of 25°C, and 2 Watts at an ambient temperature of 25°C.
The TIP31A is available in a TO-220-3 through-hole package.
The operating and storage junction temperature range is -65 to +150 °C.
The minimum DC current gain (hFE) is 10 at a collector current of 3A and collector-emitter voltage of 4V.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.2 Vdc at a collector current of 3 Adc.