| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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59 pcs
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59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP31 is a silicon NPN power transistor manufactured by ON Semiconductor, designed for versatile use in general purpose amplifier and switching applications. It offers a collector-emitter voltage (VCEO) of 40V and can handle a continuous collector current (IC) of up to 3A, with a peak current capability of 5A.
This transistor is housed in a standard TO-220-3 package, facilitating through-hole mounting. Key electrical characteristics include a DC current gain (hFE) of 10 at 3A and 4V, and a Vce saturation voltage of 1.2V at 375mA and 3A. The operating frequency is up to 3MHz.
With a total power dissipation rating of 2W at 25°C ambient temperature, the TIP31 is suitable for moderate power applications. The operating temperature range is from -65°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
The TIP31 is available in a TO-220-3 through-hole package.
The operating and storage junction temperature range is -65°C to +150°C.
The maximum continuous collector current is 3.0 Adc.
The minimum DC current gain is 10 at a collector current of 3A and collector-emitter voltage of 4V.
The maximum power dissipation is 40W at case temperature 25°C and 2.0W at ambient temperature 25°C.
The transition frequency (fT) is 3 MHz.