| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
484 pcs
|
484 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP30 is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. Manufactured by ON Semiconductor, this component offers a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 1A.
Key electrical characteristics include a maximum power dissipation of 30W at 25°C case temperature and a transition frequency of 3MHz. The transistor operates within a junction temperature range of -65°C to +150°C.
This device is supplied in a standard TO-220 package, suitable for through-hole mounting. Its complementary NPN type is the TIP29 series. The TIP30 is designed for reliability and performance in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TIP30 has a maximum collector-emitter sustaining voltage (VCEO(sus)) of 40V.
The TIP30 is available in a TO-220-3 through-hole package.
The TIP30 operates over a junction temperature range of -65°C to +150°C.
The minimum DC current gain (hFE) is 15 at IC=1A and VCE=4V.
The maximum collector-emitter saturation voltage (VCE(sat)) is 700mV at IB=125mA and IC=1A.
The TIP30 can dissipate up to 30W at a case temperature of 25°C.