LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP29B from STMicroelectronics is a silicon NPN power transistor designed for general purpose amplifier and switching applications. It is housed in a compact TO-220AB package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100 Vdc, a maximum collector-base voltage (VCB) of 100 Vdc, and a maximum emitter-base voltage (VEB) of 5.0 Vdc. The continuous collector current (IC) is rated at 1.0 Adc, with a peak current of 3.0 Adc. The base current (IB) is specified up to 0.4 Adc.
Thermal performance is supported by a total power dissipation (PD) of 30 Watts at a case temperature of 25°C, with a derating of 0.24 W/°C above that temperature. At an ambient temperature of 25°C, the power dissipation is 2.0 Watts, derated at 0.016 W/°C. The operating and storage junction temperature range is -65°C to +150°C.
Thermal resistance from junction to ambient (RθJA) is 62.5 °C/W, and junction to case (RθJC) is 4.167 °C/W. The transistor also has an unclamped inductive load energy rating of 32 mJ.
| Qty | Low | High |
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| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the TIP29B is 100 Vdc.
The continuous collector current rating for the TIP29B is 1.0 Adc.
The TIP29B is supplied in a TO-220AB package.
The operating and storage junction temperature range for the TIP29B is -65°C to +150°C.
The thermal resistance from junction to case (RθJC) for the TIP29B is 4.167 °C/W.
