| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
445 pcs
|
445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The TIP29 is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a minimum collector-emitter sustaining voltage (VCEO(sus)) of 60V at 30 mA, a maximum collector-emitter saturation voltage of 0.7V at 1A collector current, and a typical base-emitter on voltage of 1.3V. The device offers a minimum current gain-bandwidth product (fT) of 3 MHz, making it suitable for low-frequency switching and linear amplification.
The transistor is housed in a TO-220 package, which provides through-hole mounting and adequate thermal dissipation for moderate power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter sustaining voltage (VCEO(sus)) is 60V.
The minimum current gain-bandwidth product (fT) is 3 MHz.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.7V at 1A collector current and 125 mA base current.