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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,720 pcs
|
3720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Collector Current - Peak | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Case to Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP147TU is a PNP Darlington silicon power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and low-frequency switching applications. This transistor features a high DC current gain (hFE) of 1000 minimum at 5A and 4V.
Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of 100 Vdc, a continuous collector current (IC) of 10 A, and a peak collector current of 15 A. The continuous base current (IB) is rated at 0.5 A. The device can dissipate up to 125 Watts at a case temperature of 25°C.
The TIP147TU is housed in a TO-3PN package and features through-hole mounting. It operates within a junction temperature range of -65°C to +150°C. Thermal resistance from junction to case is 1.0°C/W, and from case to ambient is 35.7°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Collector-emitter voltage is 100 Vdc (minimum), emitter-base voltage is 5.0 Vdc (maximum).
Continuous collector current is 10 A, peak is 15 A.
Total device dissipation is 125 W at case temperature 25°C.
-65°C to +150°C junction temperature.
Minimum hFE of 1000 at Vce=4V and Ic=5A.
Junction-to-case is 1.0 °C/W, case-to-ambient is 35.7 °C/W.
TO-3P-3 (SC-65-3) through-hole package, supplier device package TO-3PN.