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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP147 from ON Semiconductor is a complementary PNP silicon power transistor featuring a Darlington configuration. It is designed for general-purpose amplifier and low-frequency switching applications.
This transistor boasts a high DC current gain (hFE) of 1000 minimum at 5A and 4V. It can handle a continuous collector current of 10A and a peak current of 15A. The collector-emitter sustaining voltage (VCEO(sus)) is rated at 100Vdc. The device has a total power dissipation of 125W at 25°C.
Constructed with monolithic technology and a built-in base-emitter shunt resistor, the TIP147 offers enhanced reliability. It operates within a junction temperature range of -65°C to +150°C. The thermal resistance from junction to case is 1.0°C/W, and junction to ambient is 35.7°C/W.
The TIP147 is supplied in a TO-247-3 package and is suitable for through-hole mounting. Pb-Free packages are also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 Vdc minimum.
10 Adc nominal.
Minimum 1000 at 5A collector current and 4V collector-emitter voltage.
-65°C to 150°C (junction temperature).
TO-247-3 through-hole package.
125W at case temperature 25°C.
3V maximum at 40mA base current and 10A collector current.