| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,499 pcs
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1499 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP147 is a PNP Darlington complementary silicon power transistor manufactured by STMicroelectronics. It is designed for general-purpose amplifier and low-frequency switching applications. This device offers a high DC current gain of 1000 minimum at 5A and 4V.
Key electrical specifications include a collector-emitter voltage of 100V, a continuous collector current of 10A, and a peak collector current of 15A. The total power dissipation is rated at 125W at 25°C. The transistor operates within a junction temperature range of -65°C to 150°C.
Packaged in a TO-247-3 configuration, the TIP147 is suitable for through-hole mounting. Its monolithic construction includes a built-in base-emitter shunt resistor, contributing to its reliability in demanding applications. Thermal resistance from junction-to-case is 1.0°C/W, and junction-to-ambient is 35.7°C/W.
This transistor is a preferred device, recommended for future use and offering good overall value. It is available in Pb-Free packages, aligning with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the TIP147 is 100 Vdc.
The continuous collector current (IC) for the TIP147 is 10 Adc.
The total power dissipation (PD) for the TIP147 is 125 W at 25°C.
The operating and storage junction temperature range (TJ, Tstg) for the TIP147 is -65°C to 150°C.
The TIP147 is a PNP Darlington complementary silicon power transistor.
The minimum DC current gain (hFE) for the TIP147 is 1000 at an IC of 5.0 A and VCE of 4 V.
The TIP147 transistor is mounted using the Through Hole method.