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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | 01+29 | On Request | On Request |
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The TIP146 is a PNP Silicon Power Darlington Transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and low-speed switching applications where high gain is required. This transistor is built using an epitaxial base process and is mounted in a TO-218 plastic package.
Key electrical characteristics include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 80 Vdc at 30 mA, a continuous collector current (IC) of 10 A, and a peak collector current (ICM) of 20 A. The device offers a high DC current gain (hFE) of 1000 minimum at IC = 5 A and VCE = 4 V. Power dissipation is rated at 125 W, with a thermal resistance (ΘJC) of 1.0 °C/W.
The TIP146 is suitable for power linear and switching applications. Its complementary PNP types are TIP145 and TIP147. The transistor has a base current (IB) rating of 0.5 A and an emitter-base voltage (VEBO) of 5.0 V. Operating and storage junction temperatures range from -65 to +150 °C.
This component is designed for ease of use in various electronic circuits requiring high current amplification. The TO-218 package is suitable for through-hole mounting and applications requiring robust thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Sustaining Voltage (VCEO(sus)) for the TIP146 is a minimum of 80 Vdc at 30 mA.
The maximum continuous collector current (IC) for the TIP146 is 10 A.
The TIP146 transistor is supplied in a TO-218 package.
The typical DC current gain (hFE) of the TIP146 is 1000 at IC = 5 A and VCE = 4 V.
The power dissipation (PD) for the TIP146 is 125 W.